Bismuth-based nanostructured photocatalysts for the remediation of antibiotics and organic dyes

• Akeem Adeyemi Oladipo and
• Faisal Suleiman Mustafa

Beilstein J. Nanotechnol. 2023, 14, 291–321, doi:10.3762/bjnano.14.26

• applications, are addressed. Keywords: advanced oxidation processes; emerging contaminants; low-dimensional nanomaterials; pharmaceutical by-products; Schottky junction; Review Introduction Worldwide, water pollution is rising, endangering the economic potential and development objectives of severely

• were degraded by 94.8% and 81.1% after 1 h, respectively. Another strategy for overcoming constraints such as low charge migration and the unpredictable direction of charge diffusion is the construction of a Schottky junction. A Schottky junction can be created at the interface between the

• semiconductor and a noble metal with an appropriate work function. A unidirectional charge transfer is enabled by the Schottky potential barrier, increasing charge density and separation [72]. Shen et al. [166] created a Schottky junction by synthesising NiSe2 nanosheets on top of BiVO4 nanosheets using a

Electrochemical nanostructuring of (111) oriented GaAs crystals: from porous structures to nanowires

• Elena I. Monaico,
• Eduard V. Monaico,
• Veaceslav V. Ursaki,
• Shashank Honnali,
• Vitalie Postolache,
• Karin Leistner,
• Kornelius Nielsch and
• Ion M. Tiginyanu

Beilstein J. Nanotechnol. 2020, 11, 966–975, doi:10.3762/bjnano.11.81

• decreasing diameter, but to a lesser extent. The obtained values of responsivity and detectivity are comparable with those previously reported for a graphene/GaAs NW photodetector with a Schottky junction working at 532 nm radiation [33]. The detectivity of our photodetector is better than that reported for

Construction of a 0D/1D composite based on Au nanoparticles/CuBi₂O₄ microrods for efficient visible-light-driven photocatalytic activity

• Weilong Shi,
• Mingyang Li,
• Hongji Ren,
• Feng Guo,
• Xiliu Huang,
• Yu Shi and
• Yubin Tang

Beilstein J. Nanotechnol. 2019, 10, 1360–1367, doi:10.3762/bjnano.10.134

• visible light, the electrons in the VB of CBO are excited and transferred to the CB. The Au NPs contacting the CBO microrods form a Mott–Schottky junction in the composite interface. In order to keep the Fermi level equal, the Fermi energy level of Au will shift closer to the CB of the CBO semiconductor

Mechanistic insights into plasmonic photocatalysts in utilizing visible light

• Kah Hon Leong,
• Azrina Abd Aziz,
• Lan Ching Sim,
• Pichiah Saravanan,
• Min Jang and
• Detlef Bahnemann

Beilstein J. Nanotechnol. 2018, 9, 628–648, doi:10.3762/bjnano.9.59

• characteristic features of the noble metal nanomaterials. Moreover, the formation of interfaces between noble metal particles and semiconductor materials further results in the formation of a Schottky junction. Thereby, the plasmonic characteristics have opened up a new direction in promoting an alternative path

• amalgamation of noble and semiconductor metal forms an exclusive “plasmonic photocatalyst” classification. The term “plasmonic” is mainly in reference to the unique characteristics of LSPR and induced effects [6]. However, the formation of a Schottky junction does not classify as plasmonic or resonant effects

• , and electronic interactions between the stabilizing ligands and nanoparticles [11]. Besides, the creation of a Schottky junction with a noble metal and a semiconductor acts to retard the recombination rate of electrons and holes [12]. LSPR takes place when noble metal NPs are excited by the

Two-dimensional carbon-based nanocomposites for photocatalytic energy generation and environmental remediation applications

• Suneel Kumar,
• Ashish Kumar,
• Ashish Bahuguna,
• Vipul Sharma and
• Venkata Krishnan

Beilstein J. Nanotechnol. 2017, 8, 1571–1600, doi:10.3762/bjnano.8.159

• nanocomposite heterojunctions can drastically enhance the photocatalytic efficiency by enhanced light absorption in combination with narrow band gap semiconductors, cocatalytic effect, which results in and the formation of a p–n heterojunction or Schottky junction, which can effectively suppress the

Monolayer graphene/SiC Schottky barrier diodes with improved barrier height uniformity as a sensing platform for the detection of heavy metals

• Ivan Shtepliuk,
• Jens Eriksson,
• Volodymyr Khranovskyy,
• Tihomir Iakimov,
• Anita Lloyd Spetz and
• Rositsa Yakimova

Beilstein J. Nanotechnol. 2016, 7, 1800–1814, doi:10.3762/bjnano.7.173

• graphene on silicon carbide is fabricated by thermal decomposition of a Si-face 4H-SiC wafer in argon atmosphere. Current–voltage characteristics of the graphene/SiC Schottky junction were analyzed by applying the thermionic-emission theory. Extracted values of the Schottky barrier height and the ideality

• this plot can be used to determine the series resistance. The practical realization of sensors based on a graphene/SiC Schottky junction for the detection of heavy metals requires a deep understanding of how heavy metals (Cd, Pb and Hg) behave on the graphene surface and how they modify the graphene

• reason for this observable reduction is the increase in Schottky barrier height (as was discussed before). However, when interacting with lead atoms, it can be clearly seen that the current through the Schottky junction is remarkably enhanced (as shown in Figure 9b). In fact, by modifying the type of

Active and fast charge-state switching of single NV centres in diamond by in-plane Al-Schottky junctions

• Christoph Schreyvogel,
• Vladimir Polyakov,
• Sina Burk,
• Helmut Fedder,
• Andrej Denisenko,
• Felipe Fávaro de Oliveira,
• Ralf Wunderlich,
• Jan Meijer,
• Verena Zuerbig,
• Jörg Wrachtrup and
• Christoph E. Nebel

Beilstein J. Nanotechnol. 2016, 7, 1727–1735, doi:10.3762/bjnano.7.165

• -terminated) diamond surface. A H-terminated diamond surface exhibits a two-dimensional hole channel a few nanometres below the surface and an aluminium (Al) contact forms a two-dimensional Schottky junction (i.e., in planar configuration) with the p-type surface conductive channel inducing a lateral hole

• depletion layer below and next to the Al contact [18][19]. By applying potentials on the Al-Schottky contact, the applied electric field in the depletion region of the Schottky junction induces a band bending modulation which shifts the Fermi-level over NV charge transition level and the charge state of

• centre sheet density in of [NV] = 106–107 cm−2. We used confocal microscopy with an excitation laser of 520 nm to detect the NV centre photoluminescence in the depletion region of the Schottky junction. Distinct spectral characteristics can be used to identify the charge state: the NV+ centre does not

Synthesis and applications of carbon nanomaterials for energy generation and storage

• Marco Notarianni,
• Jinzhang Liu,
• Kristy Vernon and
• Nunzio Motta

Beilstein J. Nanotechnol. 2016, 7, 149–196, doi:10.3762/bjnano.7.17

Inorganic Janus particles for biomedical applications

• Isabel Schick,
• Steffen Lorenz,
• Dominik Gehrig,
• Stefan Tenzer,
• Wiebke Storck,
• Karl Fischer,
• Dennis Strand,
• Frédéric Laquai and
• Wolfgang Tremel

Beilstein J. Nanotechnol. 2014, 5, 2346–2362, doi:10.3762/bjnano.5.244

• conjugation to Ag nanoparticles when combined to form Ag@Fe3O4 dumbbell-like hetero-nanoparticles [47]. Moreover, plasmonic photocatalysts combine two prominent features: a Schottky junction enhancing charge separation and surface plasmon resonance, which is responsible for strong absorption of visible light

Review of nanostructured devices for thermoelectric applications

• Giovanni Pennelli

Beilstein J. Nanotechnol. 2014, 5, 1268–1284, doi:10.3762/bjnano.5.141

• (Schottky) junction is maintained. In this way, the etching front (metal–silicon interface) moves deeper and deeper into the silicon substrate. Conversely, the silicon etching is very slow in regions without metal coverage, because the electrochemical potential of H2O2 is much more positive than the silicon

Nanostructure sensitization of transition metal oxides for visible-light photocatalysis

• Hongjun Chen and
• Lianzhou Wang

Beilstein J. Nanotechnol. 2014, 5, 696–710, doi:10.3762/bjnano.5.82

• hot electrons can cross over or transfer through the potential barrier of the Schottky junction at the metal–semiconductor interface [68][88]. It is noteworthy that the plasmonic nanostructures can play different roles under UV and visible light. Under UV light, the plasmonic nanostructures play the

Enhanced photocatalytic activity of Ag–ZnO hybrid plasmonic nanostructures prepared by a facile wet chemical method

• Sini Kuriakose,
• Vandana Choudhary,
• Biswarup Satpati and
• Satyabrata Mohapatra

Beilstein J. Nanotechnol. 2014, 5, 639–650, doi:10.3762/bjnano.5.75

• efficiency, since the noble metal–ZnO system has two distinct features. Firstly, noble metal–ZnO contacts result in a Schottky junction, which creates an internal electric field close to the interface causing the photogenerated electrons and holes to move in different directions, which results in a decrease

Structural, electronic and photovoltaic characterization of multiwalled carbon nanotubes grown directly on stainless steel

• Luca Camilli,
• Manuela Scarselli,
• Silvano Del Gobbo,
• Paola Castrucci,
• Eric Gautron and
• Maurizio De Crescenzi

Beilstein J. Nanotechnol. 2012, 3, 360–367, doi:10.3762/bjnano.3.42

• electrodes) and from the Si (bottom). We notice also that in case of top-down setup the J–V curve line shape shows a double-diode-like behaviour. This effect is probably due to the presence of a second Schottky junction at the interface between Si and Al at the back of the device, meaning that this contact

• characteristic, and are due to the quasi-one-dimensionality of the CNTs. We have exploited the photovoltaic activity of MWCNTs in a device made of MWCNTs airbrushed onto a Si substrate. We evidenced the formation of a Schottky junction at the interface. EQE spectra and J–V characteristics were acquired with two

• photovoltaic device. The Schottky junction between the Si and the MWCNT film is the photoactive junction. Steps of SiO2 (300 nm) are used to avoid a short-circuit forming between the silver paint (top electrode) and the silicon substrate. The back contact is made of aluminium. In the in-plane geometry, the

Surface functionalization of aluminosilicate nanotubes with organic molecules

• Wei Ma,
• Weng On Yah,
• Hideyuki Otsuka and
• Atsushi Takahara

Beilstein J. Nanotechnol. 2012, 3, 82–100, doi:10.3762/bjnano.3.10

• on the imogolite surface, in which it behaves like a semiconductor or metal–semiconductor Schottky junction. The HT3OP can act as an electron acceptor when interacting with imogolite, in which the high electron affinity of S=O of HT3OP causes a withdrawal of negative charge from imogolite resulting

Highly efficient ZnO/Au Schottky barrier dye-sensitized solar cells: Role of gold nanoparticles on the charge-transfer process

• Tanujjal Bora,
• Htet H. Kyaw,
• Soumik Sarkar,
• Samir K. Pal and
• Joydeep Dutta

Beilstein J. Nanotechnol. 2011, 2, 681–690, doi:10.3762/bjnano.2.73

• converted to a Schottky junction. Therefore, in the present study, in order to ensure the formation of a Schottky barrier at the ZnO/Au interface, the ZnO/Au photoelectrodes were annealed at 450 °C in air for 30 min after the deposition of the Au nanoparticles in order to remove the surface defects of ZnO

Schottky junction/ohmic contact behavior of a nanoporous TiO₂ thin film photoanode in contact with redox electrolyte solutions

• Masao Kaneko,
• Hirohito Ueno and
• Junichi Nemoto

Beilstein J. Nanotechnol. 2011, 2, 127–134, doi:10.3762/bjnano.2.15

• shown from distinct photocurrents in the cyclic voltammogram (CV) that the nanosurface of the mesoporous n-TiO2 film forms a Schottky junction with water containing a strong electron donor such as methanol. Formation of a Schottky junction (liquid junction) was also proved by Mott–Schottky plots at the

• electrolyte solution containing methanol and [Fe(CN)6]4−. That is, the TiO2 nanosurface responds to [Fe(CN)6]4− to give ohmic redox waves overlapped simultaneously with photocurrents due to the Schottky junction. Additionally, a second step photocurrent generation was observed in the presence of both MeOH and

• [Fe(CN)6]4− around the redox potential of the iron complex. It was suggested that the iron complex forms a second Schottky junction for which the flat band potential (Efb) lies near the redox potential of the iron complex. Keywords: cyclic voltammogram of titanium dioxide photoanode; flat band